Increasing medium-range order in amorphous silicon with low-energy ion bombardment
نویسندگان
چکیده
منابع مشابه
Stress evolution due to medium-energy ion bombardment of silicon
The evolution of stress in silicon, induced by argon ion bombardment up to fluences of 4.5 · 10 ions/cm, is studied using molecular dynamics simulations with empirical interatomic potentials. A periodically replicated 5.43 nm cube with an exposed (001) surface models the sample of silicon. An interatomic force balance method computes stresses directly across planes in the cube. After every impa...
متن کاملStructural and sputtering effects of medium energy ion bombardment of silicon
Molecular dynamics simulation is used to study argon ion bombardment of an initially perfect silicon crystal up to its damaged state at a total fluence of 4· 10 impacts/cm. Lower and higher energy processes are considered: one process with ions at 500 eV and another process with ions at 700 eV, which are like those used in a particular microelectromechanical systems (MEMS) fabrication technique...
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The range distributions of low-energy nitrogen and oxygen (2-3 keV) ions is silicon are measured and compared with these available in theories. The nitrogen distribution is very close to a Gaussian distribution as predicted by theory. The oxygen profile however, indicates a surface localized peak along with a shoulder and a long tail into the sample. The surface peak is beleived to he the resul...
متن کاملStress evolution in Si during low-energy ion bombardment
Measurements of stress evolution during low-energy argon ion bombardment of Si have been made using a real-time wafer curvature technique. During irradiation, the stress reaches a steady-state compressive value that depends on the flux and energy. Once irradiation is terminated, the measured stress relaxes slightly in a short period of time to a final value. To understand the ion-induced stress...
متن کاملMolecular dynamics simulations of void and helium bubble stability in amorphous silicon during heavy-ion bombardment
A study of void and helium sHed bubble stability in amorphous silicon sa-Sid subjected to heavy-ion bombardment was conducted with molecular dynamics simulations. The effects of incident ion energy, incident ion direction, and He pressure were investigated. He bubbles with pressures equal to or greater than 0.1 kbar were found to be stable during isotropic 2 keV xenon sXed irradiation. Bubbles ...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2003
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.1578164